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| BAT 62-07W Silicon Schottky Diode * Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-07W Marking Ordering Code 62s Q62702-A1198 Pin Configuration 1=C1 2=C2 3=A2 4=A1 Package SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 103 C Junction temperature Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 40 20 100 150 -55 ...+150 Unit V mA mW C VR IF Ptot Tj Tstg RthJA RthJS 630 470 K/W Junction - soldering point Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 62-07W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1 Unit IR VF - A V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance CT CC R0 Ls - 0.35 0.1 225 2 0.6 - pF VR = 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance k nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 62-07W Forward current IF = f (TA*;TS) * mounted on alumina Forward current IF = f (VF ) TA = parameter 10 4 25 uA mA TA IF 15 TS 10 3 T A = 25C T A = 85C T A = 125C T A = -40C 10 10 2 5 IF 120 C 10 1 0.0 0 0 20 40 60 80 100 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 1.9 TA,TS VF Permissible Pulse Load Permissiple pulse load IFmax/IFDC = f(tp) I Fmax / I FDC = f(tp) 10 3 10 1 K/W IFmax / IFDC 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAT 62-07W Diode capacitance CT = f (V R) f = 1MHz Reverse current IR = f (VR) T A = Parameter 10 3 uA 0.6 pF T A = 125C 10 2 CT 0.4 IR T A = 85C 10 1 0.3 0.2 10 0 0.1 T A = 25C 0.0 0 5 10 15 20 V 30 10 -1 0 5 10 15 20 25 30 V 40 VR VR Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in k 10 4 mV 10 3 10 2 VO 10 1 Testcircuit D.U.T 10 0 10 -1 10 -2 1000 500 200 100 50 20 VI R IN 50 CL 1nF R L V0 10 -3 0 10 RL=10 10 1 10 2 10 3 mV 10 4 VI Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01 |
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